band edge
英 [bænd edʒ]
美 [bænd edʒ]
轧制边; 谱带边沿
双语例句
- Single lavender-blue shaded fluted star/ darker blue overlay, red-purple band, white edge.
单瓣淡紫到蓝色的星型花，较暗的蓝色扩散开，红到深紫色的宽镶边，细白滚边。 - Now you have been in and out of the photonic band edge for several years, to2000, will complete the entry into the photon belt, and in the future has been in the2000.
你们现在已进出于这条光子带的边缘有数年之久，到2000年，将完全进入光子带，并在将来的2000年中一直处于其中。 - The upshift of valence band edge and the downshift of conduction band edge under tensile strain are responsible for that.
这是因为外加伸展应力使得矽的价电带往上移动以及导电带向下移动造成。 - A research on the design of multi-raschel lace band edge technology
多梳拉舍尔条带花边边部工艺设计探讨 - The resonator exhibited a very high Q value about 30000 at 77 K. The filter showed an excellent selectivity. At the band edge of the filter, the slope was about 17 dB/ MHz.
在77K时，它具有很高的品质因子，约为30000.测试结果表明，该滤波器具有很好的选择性，带边陡度为17dB/MHz，带外抑制优于-90dB。 - Gate Charge Relaxation Mechanism of MOS Structure with Zero Biased Source and Transient Spectroscopic Measurement of Si/ SiO_2 Interface State Distribution near Minority Carrier Band Edge
零偏源MOS结构的栅电荷弛豫机制及近少子带边界面态分布的瞬态谱测定 - Two electron transition processes between channel and surface states in GaN HFET: hot electron tunneling and surface to band edge transition are investigated.
研究了GaNHFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能。 - However, the error is comparatively great when it comes to the band edge.
与数值计算方法得到的结果比较，本法在靠近禁带中心处较为准确，而在靠近禁带边缘的地方出现较大的误差。 - Fiber-optic temperature sensor based on semiconductor band edge absorption
谱带吸收式光纤温度传感器 - Threshold of One-Dimensional Photonic Crystal Band Edge Laser
一维光子晶体带边激光器的阈值特性分析 - Pseudopotential Calculation of the Band Edge Structures of the Type ⅱ InAs/ GaSb ( 001) Superlattices
第二类InAs／GaSb（001）半导体超晶格能带边结构的赝势计算 - The band edge emission was observed in the PL spectra at room temperature. Its intensity was related to quality of the crystal.
在室温下的PL测量中见到了带边发射，其强度与晶体质量有关。 - When compared to unmodified TiO2, the/ TiO2 catalyst exhibited higher anatase content, smaller crystal size, higher specific surface area, centralized pore size distribution, and the blue-shifted band edge of Uv-vis adsorption spectra.
与TiO2相比，/TiO2光催化剂的锐钛矿含量高、晶粒小、BET比表面积大、孔径分布集中、光谱吸收边蓝移，具有优异的光催化氧化活性、稳定性及抗湿性能。 - The room-temperature photoluminescence spectrum of the ZnO ∶ F film showed a strong near band edge ultraviolet emission located at 379 nm with a narrow linewidth of 73 meV and a very weak visible emission associated with deep level defects.
对ZnO∶F薄膜的室温光致发光谱可以观察到位于379nm、半峰全宽为73meV的紫外发射峰，而相应于缺陷的深能级发射则完全猝灭。 - TiO_2 nanoparticles were prepared from Ti ( OC4H9) 4, following sol – gel method. The sample showed small particle size, good properties and had good ultraviolet adsorption. Band – edge of adsorption appeared obviously blue – shift.
以Ti（OC4H9）4为原料的溶胶&凝胶法制备了纳米TiO2，制备的样品的晶型为锐钛矿型，在紫外区有强吸收，吸收带边明显蓝移，显示出量子尺寸效应。 - The second is that nitrogen-doped TiO_2 has oxygen vacancy, it is close to the conduction band edge and also results in band-gap reduced.
二是掺氮TiO2存在氧空位，并且氧空位在导带边缘，使能带变窄。 - Band Edge Quadratic Electro-Optical Effect and Photorefractive Effect of Low Temperature-Growth MBE GaAs
低温分子束外延GaAs薄膜的带边二次电光效应和光折变效应 - On the basis of Maxwell's equations coupled with the rate equations, the lasing threshold of one-dimensional photonic band edge laser is investigated by finite-difference time-domain method with the introduced effective gain distribution factor ( EGDF).
采用麦克斯韦方程和速率方程相结合的模型和时域有限差分法，利用引入的有效增益分布因子概念研究了光子晶体中本征模的阈值特性。 - UV-vis diffuse reflectance spectra showed that the absorption of TiO2-S-Fe in the visible light district was strengthened and the band edge moved to longer wavelength obviously.
UV-vis漫反射表明，TiO2-S-Fe对可见光吸收增强，吸收带边明显红移； - A series of TiO2 ultrafine particles ( UFP) coated with a layer of oleic acid radicals were synthesized, and we found that the apparent optical band gap decreased and the red shift of optical absorption band edge increased when the diameter of TiO2 UFP coated decreased.
制备了一系列表面包覆油酸的TiO2超微粒.结果表明，表面包覆油酸的TiO2超微粒的表观光学带隙（Es）随着超微粒粒径减小变小； - It is found that the transmission in the band decreases and that in the gap increases as the disorder degree increases, and localization induced by disorder will spread from the band gap edge to the band center and the gap center.
研究发现，随着无序度的增加光子通带的透过率逐渐降低，而光子禁带中的透过率逐渐上升，即无序导致的局域化逐渐由光子带边向光子禁带中心和光子通带的中心扩展。 - Due to the low-frequency of applied field, the various transition pathways may interfere with each other and the band edge effect exists, Spontaneous emission can be suppressed significantly.
这些跃迁导致了自发辐射的量子干涉，再加上光子晶体能带带边的作用，自发辐射被显著抑制。 - Due to the quantum effects, the first subband is higher than the conduction band edge.
由于量子束缚效应的存在，第一个子带高于导带底，因此源漏端的势垒高度提高，载流子密度降低，漏电流降低。 - After applying voltage on the grooves, the band edge moved, and the wavelength of laser output also changed, that was the reason for the voltage tuning.
由于加电压后禁带边沿的移动，则输出激光的波长也发生改变，这也是电压调谐的原因所在。 - By fitting the transmission spectrum of the absorption edge, found that the increase of ratio of component due to the band edge absorption shifted to short wavelength direction.
通过对透射光谱的吸收边拟合，发现提高配比成分导致带边吸收向短波方向移动。 - Placing the atom in photonic band gap reservoir, we study the influence of band gap and detuning of driving field on individual spectrum lines for the different upper band edge positions.
将原子置入光子带隙热库中，针对上带隙边缘处于不同位置所对应的三种跃迁情况，研究了光子带隙和外加场失谐对分立谱线的影响。 - As nitriding temperature rising and time increasing, the products had a significant red shift of optical absorption band edge.
随着氮化时间的延长和氮化温度的提高，产物的氮化程度提高，光吸收带边红移程度增大。 - To evaluate the possibility of visible light absorption, the matrix elements for direct transitions between band edge states were studied.
为了评估可见光吸收，本章计算了带边态之间的直接跃迁矩阵元。 - The author also calculated the gain of laser at the band edge and found that it was 17 times to the gains of other laser wavelengths, the laser at the band edge was easy to win the mode competition, and thus emitted narrow linewidth laser.
计算了禁带边沿处激光获得的增益，计算发现该处波长的激光获得增益是其它位置波长获得增益的17倍，因此禁带边沿处的激光很容易赢得模式竞争，进而输出窄线宽激光。